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Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se

机译:二维非共线反铁磁体中的异常霍尔效应   半导体Cr0.68se

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摘要

Cr0.68Se single crystals with two-dimensional (2D) character have been grown,and the detailed magnetization M(T), electrical transport properties (includinglongitudinal resistivity and Hall resistivity and thermal transport ones(including heat capacity Cp(T) and thermoelectric power (TEP) S(T)) have beenmeasured. There are some interesting phenomena: (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature TN = 42 K and the activated energy Eg=3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below TN and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T). The AHE coefficient RS is 0.385 cm-3/C at T=2 K andthe AHE conductivity {\sigma}H is about 1 ohm-1cm-1 at T=40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE in Cr0.68Se is dominated by the skew-scattering mechanism. Ourresults may be helpful for exploring the potential application of these kind of2D AFM semiconductors.
机译:生长了具有二维(2D)特性的Cr0.68Se单晶,其详细磁化强度M(T),电传输特性(包括纵向电阻率和霍尔电阻率)和热传输特性(包括热容Cp(T)和热电功率) (TEP)S(T))。有一些有趣的现象:(i)Cr0.68Se在Neeltemperature TN = 42 K且活化能Eg = 3.9 meV时表现出非共线反铁磁(AFM)半导体特性;( ii)在TN以下表现出异常的霍尔效应(AHE),并且在83.7%(2 K,8.5 T)下具有较大的负磁阻(MR),在T = 2 K时AHE系数RS为0.385 cm-3 / C,AHE电导率{ \ sigma} H在T = 40 K时分别约为1 ohm-1cm-1;(iii)霍尔霍尔电阻率与纵向电阻率之间的缩放行为是线性的,进一步分析表明Cr0.68Se中AHE的起源是由偏斜散射机制主导。我们的结果可能是有助于探索这类2D AFM半导体的潜在应用。

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